DMG1026UV-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.41A SOT563

Diodes Incorporated DMG1026UV-7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG1026UV-7 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C410mA
Power - max580mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs1.8Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.45nC @ 10V
Input capacitance (Ciss) (Max) @ vds32pF @ 25V
DMG1026UV-7
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