DMG1013UWQ-7

Diodes Incorporated

MOSFET P-CH 20V 820MA SOT323

Diodes Incorporated DMG1013UWQ-7
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MOQ 2 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG1013UWQ-7 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C820mA (Ta)
Power dissipation310mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±6V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs750mOhm @ 430mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.62 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds59.76 pF @ 16 V
DMG1013UWQ-7
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