DMC31D5UDJ-7B

Diodes Incorporated

MOSFET N/P-CH 30V 0.22A SOT963

Diodes Incorporated DMC31D5UDJ-7B
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMC31D5UDJ-7B specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C220mA, 200mA
Power - max350mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
CaseSOT-963
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs1.5Ohm @ 100mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.38nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds22.6pF @ 15V
DMC31D5UDJ-7B
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