DGD2304S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Diodes Incorporated DGD2304S8-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DGD2304S8-13 specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH0.7V, 2.3V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)290mA, 600mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)70ns, 35ns
DGD2304S8-13
[ALLOC] verified
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