DGD21904MS14-13

Diodes Incorporated

IC GATE DRV HALF-BRIDG 14SO 2.5K

Diodes Incorporated DGD21904MS14-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DGD21904MS14-13 specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)4.5A, 4.5A
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case14-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)25ns, 20ns
DGD21904MS14-13
[ALLOC] verified
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