DGD2184MS8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Diodes Incorporated DGD2184MS8-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DGD2184MS8-13 specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)1.4A, 1.8A
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)40ns, 20ns
DGD2184MS8-13
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