DGD0506AFN-7

Diodes Incorporated

IC GATE DRV HALF-BRDG DFN3030-10

Diodes Incorporated DGD0506AFN-7
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DGD0506AFN-7 specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeCMOS/TTL
Channel typeSynchronous
MountingSurface Mount
Supply voltage8V ~ 14V
Logic voltage - VIL, VIH0.8V, 2.4V
High side voltage - max (Bootstrap)50 V
Current - peak output (Source, sink)1.5A, 2A
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case10-WFDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)17ns, 12ns
DGD0506AFN-7
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