BSS8402DW-7-F

Diodes Incorporated

MOSFET N/P-CH 60V/50V SOT363

Diodes Incorporated BSS8402DW-7-F
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSS8402DW-7-F specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage60V, 50V
Current - continuous drain (Id) @ 25°C115mA, 130mA
Power - max200mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs7.5Ohm @ 50mA, 5V
Input capacitance (Ciss) (Max) @ vds50pF @ 25V, 45pF @ 25V
BSS8402DW-7-F
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