Maxim Integrated DS1225AD-150IND+, NVSRAM (Non-Volatile SRAM), 64Kbit (8K x 8), Parallel Interface, 150 ns Access Time, 4.5V ~ 5.5V Supply, -40°C ~ 85°C, Through Hole, 28-EDIP, Tube.
| Parameter | Value |
|---|---|
| Memory type | Non-Volatile |
| Mounting | Through Hole |
| Supply voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tube |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Access time | 150 ns |
| Memory size | 64Kbit |
| Memory format | NVSRAM |
| Case | 28-DIP Module (0.600\", 15.24mm) |
| Memory organization | 8K x 8 |
| Write cycle time - word, page | 150ns |
It uses Maxim's NVSRAM technology, which stores the SRAM contents to an internal EEPROM array on power-down and restores them on power-up — no battery, no external supervisor, no lithium cell to replace or dispose of. The 150 ns access time and 150 ns write cycle time match the bus timing of many 8-bit microcontrollers and legacy CPLD-based memory interfaces.
Access time is 150 ns; write cycle time is also 150 ns.
The manufacturer lists no official successor for this part. Within the DS1225AD family, density and speed variants exist, but the DS1225AD-150IND+ is the industrial-temperature 150 ns version. For a pin-compatible alternative, check the DS1225AB series (same footprint, faster access) or the DS1230 series (higher density, different pinout). No direct drop-in replacement is confirmed without verifying the timing and supply requirements.