Isolated gate driver for IGBT and SiC MOSFET switching
It delivers 4 A peak output current across a 2500 Vrms isolation barrier, with a common-mode transient immunity of 25 kV/µs minimum and matched 60 ns propagation delays on both edges. Typical applications include IGBT and MOSFET gate drive in motor drives, industrial power supplies, solar inverters, and isolated DC-DC converters where reinforced isolation and fast, clean switching are required.
The 4 A peak output current charges gate capacitance within the required switching window. With 20 ns typical rise and fall times, the driver handles gates in the tens of nC range.
Isolation and transient immunity for inverter environments
With 2500 Vrms reinforced isolation and a minimum common-mode transient immunity of 25 kV/µs, this driver is built for the noisy, high-dV/dt environment of a motor-drive inverter or a power-factor-correction stage. The 60 ns maximum propagation delay on both edges is matched, which simplifies dead-time calculation in half-bridge and full-bridge topologies — the designer can budget the same delay for turn-on and turn-off without adding margin for mismatch.