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Alpha & Omega Semiconductor Inc. AONY Series

3 variants · Alpha & Omega Semiconductor Inc.

About the Alpha & Omega Semiconductor Inc. AONY Series

The Alpha & Omega Semiconductor Inc. AONY Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common drain to source voltage of 30V, mounting of Surface Mount and operating temperature of -55°C ~ 150°C (TJ). Variants differ by case, configuration and current - continuous drain (Id) @ 25°C, so you can match the exact case your application requires using the selection guide below. All listed Alpha & Omega Semiconductor Inc. AONY Series part numbers are active and orderable.

Select a variant by

Case
8-PowerSMD, Flat Leads · 8-PowerVDFN
Configuration
2 N-Channel · 2 N-Channel (Dual) Asymmetrical
Current - continuous drain (Id) @ 25°C
17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc) · 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc) · 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
FET feature
- · Standard
Gate charge (Qg) (Max) @ vgs
20nC @ 10V · 20nC @ 10V, 40nC @ 10V · 20nC @ 10V, 52nC @ 10V
Input capacitance (Ciss) (Max) @ vds
820pF @ 15V, 1890pF @ 15V · 820pF @ 15V, 2555pF @ 15V · 920pF @ 15V
Power - max
2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc) · 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) · 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Rds on (Max) @ id, vgs
5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V · 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V · 6.1mOhm @ 20A, 10V

Shared specifications

Drain to source voltage
30V
Mounting
Surface Mount
Operating temperature
-55°C ~ 150°C (TJ)
Package
Tape & Reel (TR) Cut Tape (CT)
Technology
MOSFET (Metal Oxide)

Variant comparison

ParameterAONY36352AONY36354AONY36356
Case8-PowerSMD, Flat Leads8-PowerSMD, Flat Leads8-PowerVDFN
Configuration2 N-Channel (Dual) Asymmetrical2 N-Channel (Dual) Asymmetrical2 N-Channel
Current - continuous drain (Id) @ 25°C18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
FET feature--Standard
Gate charge (Qg) (Max) @ vgs20nC @ 10V, 52nC @ 10V20nC @ 10V, 40nC @ 10V20nC @ 10V
Input capacitance (Ciss) (Max) @ vds820pF @ 15V, 2555pF @ 15V820pF @ 15V, 1890pF @ 15V920pF @ 15V
Power - max3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Rds on (Max) @ id, vgs5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V6.1mOhm @ 20A, 10V

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