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Alpha & Omega Semiconductor Inc. AONY36356 — Discrete Semiconductors

Alpha & Omega Semiconductor Inc. AONY36356

MPNAONY36356
Active

MOSFET 2N-CH 30V 17.5A/32A 8DFN

$1.0500Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AONY36356 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Power - max2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureStandard
Configuration2 N-Channel
Case8-PowerVDFN
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs6.1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs20nC @ 10V
Input capacitance (Ciss) (Max) @ vds920pF @ 15V