AOTS21115C

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 6.6A 6TSOP

Alpha & Omega Semiconductor Inc. AOTS21115C
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

AOTS21115C specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C6.6A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSC-74, SOT-457
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 6.6A, 4.5V
Gate charge (Qg) (Max) @ vgs17 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds930 pF @ 10 V
AOTS21115C
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