AOTF266L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 18A/78A TO220-3F

Alpha & Omega Semiconductor Inc. AOTF266L
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Technical specifications

AOTF266L specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta), 78A (Tc)
Power dissipation2.1W (Ta), 45.5W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.2V @ 250µA
Rds on (Max) @ id, vgs3.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs90 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5650 pF @ 30 V
AOTF266L
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