AOTF11S65L
Alpha & Omega Semiconductor Inc. · aMOS™ Series
MOSFET N-CH 650V 11A TO220-3F
[IN STOCK] In Stock: 11 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | aMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 31W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 399mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 646 pF @ 100 V |
AOTF11S65L
[ALLOC] verified