AOSS21311C

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 4.3A SOT23-3

Alpha & Omega Semiconductor Inc. AOSS21311C
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

AOSS21311C specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4.3A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case3-SMD, SOT-23-3 Variant
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 4.3A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds720 pF @ 15 V
AOSS21311C
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