AONR32320C

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 9.5A/12A 8DFN

Alpha & Omega Semiconductor Inc. AONR32320C
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

AONR32320C specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9.5A (Ta), 12A (Tc)
Power dissipation3.1W (Ta), 11W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs21mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds650 pF @ 15 V
AONR32320C
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