YAGEO XSEMI XP2N1K2EN1
MPNXP2N1K2EN1
Active
MOSFET N-CH 20V 200MA SOT723
$0.5Ref. price · indicative, final on quote
PackagingSOT-723
RoHSROHS3 Compliant
SeriesXP2N1K2E
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | XP2N1K2E |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 2.5V |
| Current - continuous drain (Id) @ 25°C | 200mA (Ta) |
| Power dissipation | 150mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-723 |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 200mA, 2.5V |
| Gate charge (Qg) (Max) @ vgs | 0.7 nC @ 2.5 V |
| Input capacitance (Ciss) (Max) @ vds | 44 pF @ 10 V |