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Winbond Electronics W25Q128JWSIQ TR — Memory (DRAM / SRAM / Flash / EEPROM)

W25Q128JWSIQ TR - Winbond Electronics

MPNW25Q128JWSIQ TR
Active
$4.19581Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

W25Q128JWSIQ TR specifications
ParameterValue
SeriesSpiFlash®
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.7V ~ 1.95V
Clock frequency133 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologyFLASH - NOR
Memory size128Mbit
Memory formatFLASH
Case8-SOIC (0.209\", 5.30mm Width)
Memory organization16M x 8
Write cycle time - word, page-, 3ms

Product details

The Winbond W25Q128JWSIQ TR is the tape-and-reel version of the 1.8 V 128 Mbit SpiFlash® serial NOR flash, organized as 16M x 8 and housed in an 8-pin SOIC with the 5.30 mm wide body. It operates from 1.7 V to 1.95 V over -40°C to 85°C.

For volume production the TR suffix matters more than it might seem: reeled parts feed directly into pick-and-place machines, keep inventory in a form factor that matches your line, and let you scale from prototype boards hand-loaded with the tube version. The silicon is identical to the W25Q128JWSIQ.

The low-voltage rail is the defining feature. Modern MCUs and wireless SoCs increasingly run 1.8 V I/O, and pairing this flash with that logic plane removes the need for a 3.3 V supply and level-translation circuitry dedicated to the memory. Interface directly with 1.8 V logic and keep a single low-voltage domain across the board.

Performance keeps pace with the density: a 133 MHz clock, standard SPI plus Dual/Quad I/O, a 3 ms page program, and 16 MB of NOR storage for boot code, configuration, and OTA image staging. If the design actually requires the faster QPI/DTR command handling, evaluate the 3.3 V W25Q128JVSIM TR instead; if the binding constraint is the 1.8 V domain, this is the part to reel.