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Vishay VS-HFA08SD60STR-M3

VS-HFA08SD60STR-M3 HEXFRED Diode, 600V 8A, 55ns trr, D-PAK

MPNVS-HFA08SD60STR-M3
End of Life

Vishay HEXFRED series, Standard Diode, 600 V DC reverse, 8 A average rectified, 55 ns reverse recovery time, 1.7 V forward voltage at 8 A, Surface Mount, D-PAK (TO-252AA), -55°C to 150°C junction.

$2.24Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

VS-HFA08SD60STR-M3 Technical Specifications
ParameterValue
SeriesHEXFRED®
Diode typeStandard
Mounting typeSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 8 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified8A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Reverse recovery time55 ns

Product details

600 V, 8 A HEXFRED — hard-switching PFC and inverter diode

The VS-HFA08SD60STR-M3 is a Vishay HEXFRED ultrafast recovery diode rated for 600 V DC reverse and 8 A average rectified current in a D-PAK (TO-252AA) surface-mount package. Its 55 ns reverse recovery time (trr) places it in the fast-recovery class for hard-switching power stages — PFC boost, output rectification in flyback converters, and motor-drive snubber circuits where recovery charge directly impacts switching loss and EMI.

55 ns trr — what it buys in a switching stage

The 55 ns trr is the time from zero current to full reverse blocking after forward conduction. In a continuous-conduction-mode PFC stage switching at 100 kHz, a 55 ns recovery cuts the diode turn-off loss by roughly 60 % compared to a 200 ns standard-recovery part at the same junction temperature. The HEXFRED structure achieves this without the snap-off characteristic of some ultrafast diodes — the soft-recovery profile reduces ringing and keeps the EMI filter from growing. Forward voltage is 1.7 V maximum at 8 A and 25 °C junction. That 1.7 V at 8 A gives a 13.6 W conduction loss at rated current — the designer sizes the copper pad on the D-PAK tab to keep junction temperature below the 150 °C absolute maximum. The 5 µA reverse leakage at 600 V is a room-temperature figure; leakage doubles roughly every 10 °C above 25 °C, so at 125 °C junction the leakage contribution to standby loss needs to be included in the thermal model.

Frequently asked questions

What is the reverse recovery time (trr) of VS-HFA08SD60STR-M3?

Reverse recovery time is 55 ns. This qualifies the diode for fast-recovery applications with switching frequencies up to several hundred kilohertz.

Is VS-HFA08SD60STR-M3 RoHS compliant?

Yes, it is ROHS3 compliant.

Is VS-HFA08SD60STR-M3 equivalent to HFA08SD60S?

The VS-HFA08SD60STR-M3 is the M3 suffix variant of the HFA08SD60S family. The M3 designation indicates the part is manufactured on Vishay's M3 process — electrical ratings (600 V, 8 A, 55 ns trr, 1.7 V Vf) are identical. The D-PAK footprint and pinout are the same. The M3 variant is the current-production version.