SIZ998BDT-T1-GE3
Vishay SIZ998BDT-T1-GE3
MPNSIZ998BDT-T1-GE3
End of Life
DUAL N-CHANNEL 30-V (D-S) MOSFET
$2.37516Price · pay online now
$2.38 / ea
2 in stock — maximum per order · 3–4 days lead time
Packaging8-PowerWDFN
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | 2 N-Channel (Dual), Schottky |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
| Power - max | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18nC @ 10V, 46.7nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 790pF @ 15V, 2130pF @ 15V |