200 V N-channel in a PowerPAK SO-8 — what it does in the assembly
The Vishay SIR624DP-T1-GE3 is a ThunderFET N-channel MOSFET rated for 200 V drain-source and 18.6 A continuous drain current at 25°C case temperature. It comes in the PowerPAK SO-8 — same PCB footprint as a standard SO-8 but with an exposed drain pad that pulls heat into the board copper. The 60 mOhm maximum on-resistance at 10 V gate drive and 23 nC total gate charge put it in the sweet spot for 48 V to 170 V DC-DC converters, PFC boost stages, and motor-drive half-bridges switching in the 100-200 kHz range.
60 mOhm at 10 A — the conduction loss number that matters
That 10 V drive level is the lower end of the recommended drive voltage window — the part also lists 7.5 V as a valid drive point, but at 7.5 V the on-resistance will be higher than the 10 V figure. For a 5 A load at 10 V gate drive, conduction loss is 1.5 W; at 18.6 A it hits 20.8 W, which is within the 52 W package dissipation limit only if the PCB copper and airflow keep the junction below 150°C.
23 nC gate charge — driver budget for 200 kHz switching
Gate charge totals 23 nC when driven to 7.5 V. At 200 kHz switching frequency, the average gate-drive current needed is 4.6 mA — well within what a typical half-bridge driver or a microcontroller GPIO with a series resistor can supply. The input capacitance is 1110 pF at 100 V drain bias, so the driver sees a capacitive load that rises with the Miller plateau; a 10-ohm gate resistor keeps the turn-on edge clean without excessive ringing on the PowerPAK SO-8's low-inductance layout.
Active production — no last-time-buy clock ticking
ROHS3 compliant.