600 V, 40 A N-channel — the TO-220 Full Pack power switch
The Vishay SIHF065N60E-GE3 is a 600 V, 40 A N-channel power MOSFET from the E series, built on a standard planar stripe technology. The 65 mOhm typical on-resistance at 10 V gate drive keeps conduction losses manageable at the 40 A continuous rating, though the 39 W power dissipation ceiling in the Full Pack means the thermal path through the tab is the practical limit for sustained high-current operation.
Gate charge and switching — 74 nC at 10 V
Total gate charge is 74 nC at 10 V, which sets the drive current needed for a given switching frequency. A 100 kHz hard-switched converter requires roughly 7.4 mA average gate drive from the controller — well within the capability of most half-bridge gate-drive ICs. The ±30 V maximum gate-source rating provides margin for gate-drive overshoot in noisy environments, though the recommended drive voltage for rated Rds(on) is 10 V.