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Vishay SIHF065N60E-GE3

Vishay SIHF065N60E-GE3 N-Channel MOSFET

MPNSIHF065N60E-GE3
End of Life

Vishay E series N-channel MOSFET, 600 V drain-source, 40 A continuous drain at 25°C, 65 mOhm Rds(on) at 10 V gate drive, 74 nC gate charge, TO-220 Full Pack through-hole package, -55°C to 150°C junction temperature.

$6.97Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SIHF065N60E-GE3 Technical Specifications
ParameterValue
SeriesE
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation39W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs74 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2700 pF @ 100 V

Product details

600 V, 40 A N-channel — the TO-220 Full Pack power switch

The Vishay SIHF065N60E-GE3 is a 600 V, 40 A N-channel power MOSFET from the E series, built on a standard planar stripe technology. It is specified for hard-switching topologies in AC-DC power supplies, DC-DC converters, and motor-drive inverters where the through-hole TO-220 Full Pack package provides a fully isolated backside tab — no separate insulating pad or washer needed when bolting to a heatsink. The 65 mOhm typical on-resistance at 10 V gate drive keeps conduction losses manageable at the 40 A continuous rating, though the 39 W power dissipation ceiling in the Full Pack means the thermal path through the tab is the practical limit for sustained high-current operation.

Gate charge and switching — 74 nC at 10 V

Total gate charge is 74 nC at 10 V, which sets the drive current needed for a given switching frequency. A 100 kHz hard-switched converter requires roughly 7.4 mA average gate drive from the controller — well within the capability of most half-bridge gate-drive ICs. The ±30 V maximum gate-source rating provides margin for gate-drive overshoot in noisy environments, though the recommended drive voltage for rated Rds(on) is 10 V.

Temperature range and thermal design

The TO-220 Full Pack's junction-to-case thermal resistance is higher than a standard TO-220 because the plastic encapsulates the die on both sides, so the heatsink interface must be sized accordingly.

Frequently asked questions

What is the closest functional alternative to the SIHF065N60E-GE3?

The SIHB053N60E-GE3 is a surface-mount (D2PAK) sibling in the same E series with a 54 mOhm Rds(on) and 47 A rating, but it is not pin-compatible — the SIHF065N60E-GE3 is a through-hole TO-220 Full Pack. For a through-hole alternative, the SIHG32N50D-GE3 offers 500 V, 30 A with 150 mOhm Rds(on) in a TO-247 package.