Logic-level N-channel in a TO-220AB — what the ratings mean
The IRL510PBF-BE3 is a 100 V, 5.6 A N-channel MOSFET from Vishay Siliconix, built on logic-level gate technology that guarantees full enhancement at 5 V gate drive. The 540 mOhm Rds(on) at Vgs=5 V and 3.4 A is the conduction-loss spec to size your heatsink against — at 5.6 A continuous the junction will rise above 25°C, and the on-resistance increases with temperature per the normalised curve.
Total gate charge is 6.1 nC at Vgs=5 V, with input capacitance of 250 pF at Vds=25 V. The low Qg keeps switching losses small in a 100 V bus application.
Package and mounting
Supplied in a TO-220-3 through-hole package (supplier device package TO-220AB), shipped in Tube. The through-hole leads suit point-to-point wiring, breadboard prototyping, or PCB mounting where a heatsink is attached to the metal tab. The 0.100-inch pitch is standard for TO-220 footprints.
