200 V P-channel — high-side switching without a bootstrap
The Infineon IRFR9220TRPBF is a 200 V P-channel MOSFET in a DPAK (TO-252) surface-mount package, rated for 3.6 A continuous drain current at 25 °C case temperature. The 200 V drain-source voltage (Vdss) makes it a natural fit for high-side switching in 48 V telecom rectifiers, 72 V battery systems, and offline auxiliary supplies where a P-channel simplifies the gate drive — no bootstrap capacitor needed, just a pull-up to the source rail.
Conduction loss and switching speed — what the numbers mean
Rds(on) is 1.5 Ohm at 2.2 A, 10 V. Gate charge is 20 nC at 10 V. Input capacitance is 340 pF at 25 V drain-source. This is low enough that the gate can be driven directly from a microcontroller GPIO through a series resistor for low-frequency switching (below a few kHz), though a dedicated driver is recommended for the full switching frequency range.
This qualifies the part for avionics, downhole instrumentation, engine-bay electronics, and outdoor telecom equipment where ambient temperatures routinely exceed 85 °C. The 2.5 W power dissipation at 25 °C ambient (board-mounted) is the practical limit for convection-cooled designs; the 42 W case-temperature figure assumes a heatsink or a large copper pour on the DPAK tab.