500 V N-channel in a TO-220AB — where it fits
The IRF830APBF is a 500 V, 5 A N-channel power MOSFET in the through-hole TO-220AB package, built on planar MOSFET technology. It targets offline AC-DC converters, PFC boost stages, and 48 V telecom brick supplies where the 500 V drain-source rating provides adequate margin for universal-input flyback designs.
Rds(on) and gate charge — sizing the drive and heatsink
Maximum on-resistance is 1.4 Ohm at 3 A drain current with a 10 V gate drive. At the full 5 A continuous drain rating, conduction loss reaches I²R = 35 W — well within the 74 W package dissipation limit at the case, but the designer must derate for ambient temperature and heatsink thermal resistance. Total gate charge is 24 nC at 10 V. A typical gate-driver IC sourcing 1 A peak can switch this MOSFET in under 30 ns, keeping the switching transition within the safe-operating area for hard-switched topologies up to about 100 kHz.
Temperature range and package — board-level fit
The junction temperature range spans -55 °C to 150 °C, suiting the part for industrial and telecom environments where the ambient may reach 85 °C and the heatsink runs hot. The TO-220AB lead form matches the standard 0.100-inch pitch hole pattern on a 2-layer PCB; the metal tab requires electrical isolation or a shared drain node.