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Vishay BAT165-G3/H

BAT165-G3/H Schottky Diode, 40V 500mA, DO-219AC

MPNBAT165-G3/H
End of Life

Vishay BAT165-G3/H Schottky diode, 40 V reverse voltage, 500 mA average rectified current, 540 mV forward drop at 250 mA, fast recovery ≤ 500 ns, DO-219AC (microSMF) surface mount package.

$0.4Ref. price · indicative, final on quote
PackagingDO-219AC
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BAT165-G3/H Technical Specifications
ParameterValue
Diode typeSchottky
Mounting typeSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if540 mV @ 250 mA
Current - reverse leakage @ vr8 µA @ 40 V
Current - average rectified500mA
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-219AC
Capacitance @ vr, f8.4pF @ 10V, 1MHz

Product details

Schottky rectifier for low-power rail protection

The Vishay BAT165-G3/H is a Schottky barrier rectifier rated for 40 V reverse voltage and 500 mA average rectified current. It targets low-voltage rail protection, polarity protection, and freewheeling diode roles in DC-DC converters and portable equipment where forward drop matters more than breakdown margin.

Forward drop and leakage — the efficiency pair

Forward voltage is specified at 540 mV maximum at 250 mA forward current. That is the conduction loss floor for the typical load point — a designer sizing for 500 mA peak sees roughly 270 mW dissipation at full load before derating for ambient temperature. Reverse leakage is 8 µA at 40 V reverse bias. In a battery-powered circuit drawing microamps in sleep, that leakage current can dominate the off-state budget. The 150°C junction temperature rating gives headroom for reflow and moderate self-heating, but leakage rises exponentially with temperature — expect higher standby draw at elevated ambient.

Switching speed and package fit

Recovery time is listed as fast recovery ≤ 500 ns at > 200 mA forward current. That is adequate for line-frequency rectification and low-frequency switching up to tens of kilohertz, but not for high-speed synchronous rectification in a 500 kHz+ converter — a faster Schottky with lower junction capacitance would be needed there. The DO-219AC (microSMF) package is a small surface-mount SOD-123FL-like outline. It fits reflow assembly with standard pick-and-place and requires no thermal pad — the junction-to-ambient thermal resistance is set by the copper pad area on the PCB. The 8.4 pF capacitance at 10 V is low enough to avoid signal degradation in protection clamping roles.

Active production — no LTB concern

Product status is listed as Active.

Frequently asked questions

What is the reverse leakage current of BAT165-G3/H?

Reverse leakage current is 8 µA at 40 V reverse voltage. This is specified at room temperature; leakage increases with junction temperature, so expect higher off-state current in elevated ambient conditions.

What package type does BAT165-G3/H use?

The BAT165-G3/H is supplied in a DO-219AC surface-mount package, also referred to as microSMF. It is a small SOD-123FL-like outline suitable for reflow assembly with standard pick-and-place equipment.

Can I replace BAT165-G3/H with BAT54?

The BAT54 is a different Schottky diode with a 30 V reverse rating and 200 mA average current, versus the BAT165's 40 V and 500 mA. The BAT54 has lower current capacity and a different package (SOT-23). They are not pin-compatible or direct replacements — the BAT165 is a larger part for higher current and voltage.