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Vishay Siliconix SI4850EY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4850EY-T1-GE3

MPNSI4850EY-T1-GE3
Active
$1.5100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4850EY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6A (Ta)
Power dissipation1.7W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs22mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V