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Vishay Siliconix SI4830CDY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4830CDY-T1-GE3

MPNSI4830CDY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4830CDY-T1-GE3 specifications
ParameterValue
SeriesLITTLE FOOT®
FET type2 N-Channel (Half Bridge)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C8A
Power - max2.9W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs20mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs25nC @ 10V
Input capacitance (Ciss) (Max) @ vds950pF @ 15V