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Vishay Siliconix SI4829DY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4829DY-T1-E3

MPNSI4829DY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4829DY-T1-E3 specifications
ParameterValue
SeriesLITTLE FOOT®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation2W (Ta), 3.1W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Isolated)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs215mOhm @ 2.5A, 4.5V
Gate charge (Qg) (Max) @ vgs8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds210 pF @ 10 V