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Vishay Siliconix SI4818DY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4818DY-T1-E3

MPNSI4818DY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4818DY-T1-E3 specifications
ParameterValue
SeriesLITTLE FOOT®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5.3A, 7A
Power - max1W, 1.25W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id800mV @ 250µA (Min)
Rds on (Max) @ id, vgs22mOhm @ 6.3A, 10V
Gate charge (Qg) (Max) @ vgs12nC @ 5V