Skip to main content
Vishay Siliconix SI4814BDY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4814BDY-T1-GE3

MPNSI4814BDY-T1-GE3
Obsolete
$0.6500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4814BDY-T1-GE3 specifications
ParameterValue
SeriesLITTLE FOOT®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C10A, 10.5A
Power - max3.3W, 3.5W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Half Bridge)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs10nC @ 4.5V