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Vishay Siliconix SI4804BDY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4804BDY-T1-E3

MPNSI4804BDY-T1-E3
Obsolete
$0.7000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4804BDY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5.7A
Power - max1.1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ManufacturerVishay Siliconix
Configuration2 N-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs22mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs11nC @ 4.5V