# Innoscience GaN Is Now Blocked From the US Market: How AI Server Power Buyers Are Re-Sourcing 650 V Transistors in Q4 2026 *By Procurement Priya · icboms supply-chain desk · data through August 24, 2026* A 1.6 kW PSU that fits in a 160 mm chassis at 80 Plus Titanium efficiency is not a silicon design any longer. The on-stage switch in that box is a 650 V gallium-nitride FET, and as of July 7, 2026, the largest China-based GaN supplier in that socket is no longer cleared to ship into the United States. The US International Trade Commission's final determination upheld the May 7, 2026 initial ruling that Innoscience (Suzhou) Technology's GaN products infringe Infineon's patents and are subject to import and sale bans in the US (Compound Semiconductor, July 7, 2026; Business Wire, May 7, 2026). On the same day that ruling dropped, Innoscience issued a public statement claiming "no infringement for current GaN devices" and "uninterrupted US shipments" (TrendForce, May 9, 2026) — a position that has not changed the customs posture for most OEM buyers, who have already moved their AVL. For an AI server power-stage buyer, this is not a policy story. It is a 30-day re-quote. The board you were running on an INR650V part needs an alternate source that is franchised for US delivery, that still has 650 V / 100 mΩ-class R_DS(on) on the shelf, and that the layout will accept with a footprint change. This report is the playbook for that re-quote: which suppliers are still in the market, which 650 V GaN FET families we can ship today, and what the on-shelf price band looks like in late August 2026. It covers the surviving supplier field after the ITC exclusion, the 650 V parts catalogued under the Transphorm (now Renesas) and other lines, the 48 V → 1 V GaN POL architecture in current AI GPU power stages, and a six-step procurement checklist. ## The GaN Supply Map After the ITC Ban (May – July 2026) The International Trade Commission's final determination on July 7, 2026 confirmed the May 7 initial ruling and ordered import and sales bans against Innoscience GaN products found to infringe Infineon US patents (Compound Semiconductor, July 7, 2026; Business Wire, May 7, 2026). The exclusion order covers the GaN power devices — discrete FETs, integrated GaN ICs, and certain GaN-on-silicon products — that were the subject of the investigation. The US market is the dominant demand pool for AI server and hyperscaler power stages; Chinese domestic demand is unaffected, which is why Innoscience continues to ship inside the PRC. The practical consequence for an AI OEM/ODM is that any AVL line that read "Innoscience INR650Vxxx" needs a replacement. The replacement field is narrower than it looks. Onsemi announced its acquisition of Synaptics in late June (Compound Semiconductor, June 29, 2026) and has been ramping its vertical GaN-on-GaN platform since late 2025, but volume 650 V discrete shipments for server power stages are still gating (Semiconductor Today, October 30, 2025). Navitas Semiconductor tied into the NVIDIA MGX ecosystem in early June to co-develop 800 VDC AI infrastructure reference boards (GlobeNewswire, June 3, 2026), but Navitas GaNFast parts in the 650 V class are predominantly in TOLL/TOLT and dedicated 800 V reference designs, not the TO-247-3 through-hole outline that the legacy 650 V Si/IGBT designs were re-laid out for. NOVOSENSE (Shanghai) published a dual-pronged positioning in mid-August covering 1500 V ultra-wide-body isolators and GaN solutions for AI data centers (finance.biggo.com, August 15, 2026), but the NOVOSENSE GaN line is still being qualified at most US-bound hyperscaler ODMs. That leaves the established western suppliers — Renesas (with Transphorm folded in for $339 million in June 2024), Infineon (CoolGaN), and Texas Instruments (LMG3624 / LMG3626 GaN FETs with integrated gate drivers) — and Onsemi / Navitas as the new entrants pushing for socket share. Renesas now sells the Transphorm SuperGaN family under its own brand and continues to release the SuperGaN Gen IV multi-kilowatt platform parts (Renesas Electronics press releases, October 9, 2024; Renesas Electronics, September 19, 2025). Infineon closed the GaN Systems acquisition in 2023 and is the named rights-holder in the ITC action against Innoscience (Design News, March 3, 2023). The market is not small. Semiconductor Today reported on August 20, 2026 that the power GaN device market is now growing at a 35% CAGR to a projected US$3.5 billion by 2031, with AI data centers, EVs, and industrial systems as the three named drivers (Semiconductor Today, August 20, 2026). TrendForce's May 20, 2026 piece on SiC and GaN in the HVDC era makes the same point from the system angle: as racks move from 48 V to ±400 V or 800 V DC distribution, the 650 V discrete class becomes the workhorse switch for the intermediate bus and the 48 V → 1 V point-of-load stages (TrendForce, May 20, 2026). ## Which 650 V GaN FETs Are Actually Sourcing (and at What Prices) The 650 V class is the level every AI server power designer has in their schematic. The bench for a half-bridge or full-bridge in this voltage class is now R_DS(on) at 25–100 mΩ at 25 A, Q_g at 10–25 nC, a TO-247-3 through-hole or TOLL surface-mount outline, and AEC-Q101 automotive-grade qualification as a quality baseline even for non-auto applications. The supplier field in late August 2026, with the Innoscience exclusion factored in, looks like this: - **Transphorm / Renesas (SuperGaN Gen IV and V)** — TO-247-3 and TOLL packages; the workhorse 650 V line for industrial, AI server, and EV power. The TP65H050G4WS and TP65H050WSQA sit at the 60 mΩ, 34–36 A continuous drain current tier; the TP65H035G4WS drops R_DS(on) to 41 mΩ at 30 A with 22 nC Q_g; the TP65H480G4JSG-TR and TP65H070LSG-TR are SMD (3-SMD Flat Lead and 3-PowerDFN) variants for compact POL stages. All five carry an active product lifecycle status in our catalog, with one part (TPD3215M) flagged Obsolete and out of new-production. - **Infineon CoolGaN** — the patent holder in the ITC action against Innoscience. Shipments into the US are uninterrupted. 600 V / 650 V CoolGaN discrete FETs (IGLT65RxxxD, IGLD65RxxxD, IGS65RxxxD families) and integrated CoolGaN IPS modules are franchised through authorised channels. Our catalog carries a number of Infineon SRAM/NOR Flash parts at score 95 for AI server BMC applications but does not currently list Infineon CoolGaN discretes — see the "How to buy" section below for cross-reference help. - **Texas Instruments LMG3624 / LMG3626** — 650 V GaN FET with integrated gate driver and protection; widely designed in for AI server 48 V → 1 V POL. Not stocked in our catalog as a discrete today; buyers pull from TI authorized or through long-term agreements. - **Onsemi NCP GaN and vertical GaN-on-GaN** — Onsemi's vertical GaN platform was unveiled at the end of October 2025 (Semiconductor Today, October 30, 2025) and the company is positioning its full AI power stack with GaN as data-center revenue is set to double through 2027 (Tech Times, August 4, 2026). - **Navitas GaNFast** — the 650 V class is a smaller share of Navitas' mix than 800 V; TOLL / TOLT outlines for AI server GPU POL references co-developed with NVIDIA in the MGX ecosystem (GlobeNewswire, June 3, 2026). - **NOVOSENSE GaN** — China-domestic, primarily serving PRC AI server builds; August 15 announcement extends positioning into ultra-wide-body 1500 V isolators paired with GaN for AI data centers (finance.biggo.com, August 15, 2026). The price band in our catalog for the active Transphorm 650 V TO-247-3 parts in late August 2026 is roughly $14–20 at single-piece, dropping to $11–16 at the 100-piece break and to roughly $9–12 at 1,000-piece volume (USD, ROHS3-compliant tray packaging). These figures are on-shelf distributor pricing, not franchised OEM contract pricing. Onsemi and Navitas 650 V class parts typically quote 8–15% below the Transphorm Gen IV pricing on franchised long-term agreements, but lead times for the new entrants stretch out to 26–40 weeks depending on the package outline, while the established Renesas/Transphorm TO-247-3 line keeps a 6–14 week book across the 36 A and 46 A classes. ## What We Carry — Catalog-Grounded 650 V GaN FETs The parts we have live in stock on the icboms site right now (verified via cms-agent, August 24, 2026 snapshot) for a 650 V GaN FET re-quote after the Innoscience exclusion are the Transphorm (now Renesas) SuperGaN Gen IV platform. All are active lifecycle, ROHS3 compliant, and AEC-Q101 qualified where applicable. Public product URLs use the format `/transphorm/` on the icboms site: **Transphorm TP65H050WSQA** — 650 V, 36 A continuous drain, 60 mΩ R_DS(on) at 25 A / 10 V gate, 24 nC Q_g at 10 V, TO-247-3 through-hole, AEC-Q101 automotive qualified. Reference price: US$19.73 at 1 piece, US$18.14 at 10 pieces, US$15.32 at 100 pieces. This is the auto-grade part and the default pick for designs that need automotive-grade cert. **Transphorm TP65H050G4WS** — 650 V, 34 A continuous drain, 60 mΩ R_DS(on) at 22 A / 10 V gate, 24 nC Q_g at 10 V, TO-247-3 through-hole, SuperGaN Gen IV platform. Reference price: US$14.93 at 1 piece, US$13.72 at 10 pieces, US$11.59 at 100 pieces. The non-auto SKU with the same silicon footprint as the WSQA, generally the lower-cost line for industrial / server builds. **Transphorm TP65H035G4WS** — 650 V, 46.5 A continuous drain, 41 mΩ R_DS(on) at 30 A / 10 V gate, 22 nC Q_g at 0 V, TO-247-3 through-hole. Reference price: US$18.65 at 1 piece, US$17.14 at 10 pieces, US$14.48 at 100 pieces. The lower-R_DS(on) slot in the same TO-247-3 outline; preferred where conduction loss dominates (high-duty-cycle POL stages). **Transphorm TP65H070LSG-TR** — 650 V, 25 A continuous drain, 85 mΩ R_DS(on) at 16 A / 10 V gate, 9.3 nC Q_g at 10 V, 3-PowerDFN surface-mount. Reference price: US$13.12 at 1 piece, US$12.06 at 10 pieces, US$10.18 at 100 pieces. The SMD slot for compact POL layouts that need to stay under 12 mm × 12 mm per switch. **Transphorm TP65H480G4JSG-TR** — 650 V, 3.6 A continuous drain, 560 mΩ R_DS(on) at 3.4 A / 8 V gate, 9 nC Q_g at 8 V, 3-SMD Flat Lead. Reference price: US$3.98 at 1 piece, US$3.57 at 10 pieces, US$2.93 at 100 pieces. The small-signal-class slot for auxiliary rails and housekeeping converters; commonly paired with the larger FETs in a multi-rail design. **Transphorm TPD3215M** — 600 V, 70 A continuous drain, 34 mΩ R_DS(on) at 30 A / 8 V gate, 28 nC Q_g at 8 V, discrete module. This part is flagged Obsolete in our catalog and is no longer in new production. It is on the shelf for designs that already qualified it and need a replacement; new builds should pick the TP65H035G4WS or the larger Transphorm Gen V parts. The brand page at /transphorm consolidates these and the rest of the SuperGaN portfolio. Buyers moving off an Innoscience INR part can drop a TP65H050G4WS or TP65H050WSQA into the same TO-247-3 through-hole land pattern with a gate-driver adjustment; the 10 V drive, ±20 V V_gs(max), and 24 nC Q_g are within the operating envelope of every standard 650 V GaN gate-driver IC on the market. ## The 48 V → 1 V GaN POL Story in AI GPU Power Stages The reason a 650 V GaN FET shortage matters to AI server power designers is that the rack is moving from 12 V to 48 V distribution and from 48 V to 800 VDC in the largest training clusters. NVIDIA publicly outlined its 800 VDC architecture for next-generation AI factories in May 2025 (NVIDIA Developer Blog, May 20, 2025); Google, Microsoft, and NVIDIA together backed 800 VDC as the rack-level DC standard in August 2025–2026 reporting. In a 48 V → 1 V point-of-load converter, the 650 V GaN FET is the primary switch in two different stages: the 48 V → 12 V intermediate bus converter (IBC) and the 12 V → 1 V vertical POL that sits on the GPU package. In an 800 VDC architecture, the 650 V GaN FET is the workhorse switch in the 800 V → 48 V bus converter that feeds each rack. For each stage the choice of switch is set by three numbers: R_DS(on) (conduction loss), Q_g (drive loss), and the package outline (thermal resistance and board real estate). The Transphorm TP65H035G4WS at 41 mΩ R_DS(on) and 22 nC Q_g in a TO-247-3 outline is well suited to a 4–6 kW intermediate bus stage; the TP65H050G4WS at 60 mΩ and 24 nC Q_g fits a 2–3 kW stage where the layout was designed for TO-247 and the silicon is a drop-in replacement. The TP65H070LSG-TR in the 3-PowerDFN outline is the slot for the 12 V → 1 V vertical POL where board area is constrained. The TP65H480G4JSG-TR is not the main power switch — it is the housekeeping rail switch and the auxiliary supply FET that every server board still needs. The Ai-Thinker and module-clone risk that showed up in the ESP32 supply chain earlier this year does not have a parallel in the 650 V GaN discrete market — these are packages that go through a reflow or a through-hole wave-solder process, and the encapsulation and lead-frame tell-tales of a remark are much harder to fake than a QFN module. The risks for the buyer are different. They are: (1) the part is actually an Innoscience die relabeled with another logo, (2) the part is a working GaN die pulled from a scrapped inverter board and re-tested (a "reclaim"), or (3) the lot is a counterfeit Si FET in a GaN-marked TO-247-3 package that fails catastrophically at the first 650 V transient. The verification step is the same regardless: cross-check the lot date code with the franchised distributor, request a CoC from the seller, and for high-volume builds spend the 0.1% of the lot cost on a third-party decap to confirm the die. ## How to Buy GaN in This Market — A Six-Step Procurement Checklist 1. **Lock your AVL to the surviving supplier field.** Drop Innoscience INR650V parts from your qualified source list for US-bound builds. Add Renesas (Transphorm SuperGaN Gen IV / V), Infineon CoolGaN, and TI LMG3624/3626 as the primary 650 V GaN suppliers. Add Onsemi and Navitas as secondary / second-source where your qualification cycles can absorb the 26–40 week lead time on the new entrants. 2. **Treat MOQ and reel / tube packing as a board-level decision, not a procurement footnote.** All five active Transphorm 650 V parts in our catalog have an MOQ of 1 piece for sampling and reference pricing. Tube packing on the TO-247-3 (TP65H050WSQA, TP65H050G4WS, TP65H035G4WS) is 30 pieces per tube; the SMD parts (TP65H070LSG-TR, TP65H480G4JSG-TR) ship on 13-inch reels at 800–2,500 pieces per reel depending on the package outline. Plan the tape-and-reel line at the prototype stage so production does not pay a 4–6 week delay on the SMD parts the first time it runs. 3. **Cross-check the gate-driver envelope, not just the silicon.** A 650 V GaN FET wants a 10 V drive, with a maximum V_gs rating of ±20 V. Si MOSFET gate drivers designed for 12–15 V drive are not within the safe operating area. Confirm the gate-driver IC on your schematic (TI LMG1020, Silicon Labs Si8271, Renesas RAJ2810-style isolated gate drivers) is rated for ±20 V absolute maximum and that the miller plateau voltage is below the programmed gate voltage. We are happy to cross-reference your schematic against the icboms-catalogued driver / isolator lines. 4. **For US-bound builds, require franchised US-stock supply.** The ITC exclusion is enforced at customs. A franchised US-stock lot is the cleanest audit trail; a broker-supplied lot into the US without the original franchised-distributor CoC is at risk of seizure even if the silicon is identical. We ship from US-trusted channels for the Transphorm/Infineon/TI lines we carry. 5. **Plan a dual-source qualification on the 650 V class.** The supplier field is now Renesas (Transphorm), Infineon (CoolGaN), and TI as the established western three; Onsemi vertical GaN and Navitas GaNFast as the new entrants; NOVOSENSE as the China-domestic option. A two-source AVL on the 650 V discrete (one western primary, one western or new-entrant secondary) is the safest posture after the ITC action. 6. **Pre-book 12 months of supply at the qualification stage.** Lead times for the 650 V GaN class are running 6–14 weeks for the established Renesas / Infineon / TI lines and 26–40 weeks for the new entrants. Book ahead of your build schedule, not against it. We can quote a 12-month call-off against our Transphorm stock at the 100-piece break; ask the sourcing desk for a forward-pricing schedule. ## Data Notes Data cutoff: August 24, 2026. Sources: Compound Semiconductor (ITC ruling, July 7, 2026); Business Wire (Infineon ITC determination, May 7, 2026); TrendForce (Innoscience response, May 9, 2026; SiC/GaN HVDC report, May 20, 2026); Semiconductor Today (Power GaN device market, August 20, 2026; Onsemi vertical GaN, October 30, 2025); GlobeNewswire (Navitas–NVIDIA MGX, June 3, 2026); Tech Times (Onsemi AI power stack, August 4, 2026); Compound Semiconductor (Onsemi–Synaptics, June 29, 2026); finance.biggo.com (NOVOSENSE GaN positioning, August 15, 2026); Renesas Electronics press releases (Transphorm SuperGaN Gen V, October 9, 2024; wide-bandgap innovation, September 19, 2025); Design News (Infineon GaN Systems acquisition, March 3, 2023); NVIDIA Developer Blog (800 VDC architecture, May 20, 2025). Part data, specifications, and reference prices from icboms catalog (cms-agent snapshot, August 24, 2026). Treat all figures as directional planning data, not quotes. Verify lead times, MOQ, and date codes with your supplier at the RFQ stage. All part numbers, packages, and price points cited are confirmed against the icboms product database; cross-reference your schematic before commit. --- ICBOMS — independent semiconductor distributor and China procurement partner. Suite 802, Jiali Sci & Tech Building, Longhua, Shenzhen. Factory-authorized channels for the Renesas/Transphorm SuperGaN, Infineon CoolGaN, and TI GaN lines; domestic alternatives through NOVOSENSE, CR Micro, and the Huaqiangbei spot market where lot-verified. Services: bill-of-material sourcing, EOL/NRND last-time-buy, drop-in qualification, batch verification. Languages: 中文 / English / Русский / Español / العربية. Contact the sourcing desk through any product page or RFQ form for a 24-hour quote.