Toshiba Semiconductor XPW6R30ANB,L1XHQ
MPNXPW6R30ANB,L1XHQ
End of Life
MOSFET N-CH 100V 45A 8DSOP
$1.98Ref. price · indicative, final on quote
Packaging8-PowerVDFN
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 45A (Ta) |
| Power dissipation | 960mW (Ta), 132W (Tc) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 3.5V @ 500µA |
| Rds on (Max) @ id, vgs | 6.3mOhm @ 22.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 52 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3240 pF @ 10 V |