XPN6R706NC,L1XHQ
Toshiba Semiconductor · U-MOSVIII-H Series
MOSFET N-CH 60V 40A 8TSON
[IN STOCK] In Stock: 29 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Ta) |
| Power dissipation | 840mW (Ta), 100W (Tc) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.5V @ 300µA |
| Rds on (Max) @ id, vgs | 6.7mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 10 V |
XPN6R706NC,L1XHQ
[ALLOC] verified