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XPJR6604PB~6LXHQ

Toshiba Semiconductor XPJR6604PB,LXHQ

MPNXPJR6604PB,LXHQ
End of Life

40V; UMOS9; 0.66MOHM; S-TOGL

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$4.13 / ea

10 in stock — maximum per order · 3–4 days lead time

$4.04 / ea from 10 pcs

Packaging5-PowerSFN
RoHSROHS3 Compliant
SeriesU-MOSIX-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

XPJR6604PB,LXHQ specifications
ParameterValue
SeriesU-MOSIX-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C200A (Ta)
Power dissipation375W (Tc)
Operating temperature175°C
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case5-PowerSFN
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs0.66mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs128 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11380 pF @ 10 V