Toshiba Semiconductor TW083N65C,S1F
MPNTW083N65C,S1F
End of Life
G3 650V SIC-MOSFET TO-247 83MOH
$12.79Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 18V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 111W (Tc) |
| Operating temperature | 175°C |
| Package | Tube |
| Vgs | +25V, -10V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 600µA |
| Rds on (Max) @ id, vgs | 113mOhm @ 15A, 18V |
| Gate charge (Qg) (Max) @ vgs | 28 nC @ 18 V |
| Input capacitance (Ciss) (Max) @ vds | 873 pF @ 400 V |