Toshiba Semiconductor TW070J120B,S1Q
MPNTW070J120B,S1Q
End of Life
SICFET N-CH 1200V 36A TO3P
$32.42Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 20V |
| Current - continuous drain (Id) @ 25°C | 36A (Tc) |
| Power dissipation | 272W (Tc) |
| Operating temperature | -55°C ~ 175°C |
| Package | Tube |
| Vgs | ±25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET feature | Standard |
| Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ id | 5.8V @ 20mA |
| Rds on (Max) @ id, vgs | 90mOhm @ 18A, 20V |
| Gate charge (Qg) (Max) @ vgs | 67 nC @ 20 V |
| Input capacitance (Ciss) (Max) @ vds | 1680 pF @ 800 V |