Toshiba Semiconductor TRS4E65F,S1Q
MPNTRS4E65F,S1Q
End of Life
DIODE SIL CARB 650V 4A TO220-2L
$2.46Ref. price · indicative, final on quote
PackagingTO-220-2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.6 V @ 4 A |
| Current - reverse leakage @ vr | 20 µA @ 650 V |
| Current - average rectified | 4A |
| Operating temperature - junction | 175°C (Max) |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-220-2 |
| Capacitance @ vr, | 16pF @ 650V, 1MHz |
| Reverse recovery time | 0 ns |