Toshiba Semiconductor TPWR8503NL,L1Q
MPNTPWR8503NL,L1Q
End of Life
MOSFET N-CH 30V 150A 8DSOP
$2.65Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSRoHS Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 150A (Tc) |
| Power dissipation | 800mW (Ta), 142W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.3V @ 1mA |
| Rds on (Max) @ id, vgs | 0.85mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 74 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6900 pF @ 15 V |