Toshiba Semiconductor TPN4R806PL,L1Q
MPNTPN4R806PL,L1Q
End of Life
MOSFET N-CH 60V 72A 8TSON
$0.9Ref. price · indicative, final on quote
Packaging8-PowerVDFN
SeriesU-MOSIX-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIX-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 72A (Tc) |
| Power dissipation | 630mW (Ta), 104W (Tc) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.5V @ 300µA |
| Rds on (Max) @ id, vgs | 3.5mOhm @ 36A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2770 pF @ 30 V |