Toshiba Semiconductor TPN4R712MD,L1Q
MPNTPN4R712MD,L1Q
End of Life
MOSFET P-CH 20V 36A 8TSON
$0.85Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 36A (Tc) |
| Power dissipation | 42W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 1.2V @ 1mA |
| Rds on (Max) @ id, vgs | 4.7mOhm @ 18A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 65 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 4300 pF @ 10 V |