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Toshiba Semiconductor TPN2R203NC,L1Q

TPN2R203NC,L1Q - Toshiba Semiconductor

MPNTPN2R203NC,L1Q
End of Life

MOSFET N-CH 30V 45A 8TSON

$1.16Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
SeriesU-MOSVIII
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPN2R203NC,L1Q specifications
ParameterValue
SeriesU-MOSVIII
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C45A (Tc)
Power dissipation700mW (Ta), 42W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 500µA
Rds on (Max) @ id, vgs2.2mOhm @ 22.5A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2230 pF @ 15 V