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Toshiba Semiconductor TPH5900CNH,L1Q

Toshiba Semiconductor TPH5900CNH,L1Q

MPNTPH5900CNH,L1Q
End of Life

MOSFET N-CH 150V 9A 8SOP

$0.97Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPH5900CNH,L1Q specifications
ParameterValue
SeriesU-MOSVIII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Ta)
Power dissipation1.6W (Ta), 42W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 200µA
Rds on (Max) @ id, vgs59mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds600 pF @ 75 V