TPH4R50ANH1,LQ

Toshiba Semiconductor · U-MOSVIII-H Series

MOSFET 100V 4.5MOHM SOP-ADV(N)

Toshiba Semiconductor TPH4R50ANH1,LQ
[IN STOCK] In Stock: 1,268 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

TPH4R50ANH1,LQ specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSVIII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C92A (Tc)
Power dissipation800mW (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs4.5mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs58 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5200 pF @ 50 V
TPH4R50ANH1,LQ
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