Toshiba Semiconductor TPH4R10ANL,L1Q
MPNTPH4R10ANL,L1Q
End of Life
MOSFET N-CH 100V 92A/70A 8SOP
$1.65Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 92A (Ta), 70A (Tc) |
| Power dissipation | 2.5W (Ta), 67W (Tc) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 4.1mOhm @ 35A, 10V |
| Gate charge (Qg) (Max) @ vgs | 75 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6300 pF @ 50 V |