TPH2R608NH,L1Q

Toshiba Semiconductor · U-MOSVIII-H Series

MOSFET N-CH 75V 150A 8SOP

Toshiba Semiconductor TPH2R608NH,L1Q
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

TPH2R608NH,L1Q specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSVIII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C150A (Tc)
Power dissipation142W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs2.6mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6000 pF @ 37.5 V
TPH2R608NH,L1Q
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