Toshiba Semiconductor TPH2R408QM,L1Q
MPNTPH2R408QM,L1Q
End of Life
MOSFET N-CH 80V 120A 8SOP
$2.01Ref. price · indicative, final on quote
Packaging8-PowerVDFN
SeriesU-MOSX-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSX-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 3W (Ta), 210W (Tc) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 3.5V @ 1mA |
| Rds on (Max) @ id, vgs | 2.43mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8300 pF @ 40 V |