Toshiba Semiconductor TPH2R306NH1,LQ
MPNTPH2R306NH1,LQ
End of Life
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
$1.51Ref. price · indicative, final on quote
Packaging8-PowerTDFN
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 136A (Tc) |
| Power dissipation | 800mW (Ta), 170W (Tc) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 72 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6100 pF @ 30 V |