TPH2R306NH1,LQ
Toshiba Semiconductor · U-MOSVIII-H Series
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
[IN STOCK] In Stock: 24 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 136A (Tc) |
| Power dissipation | 800mW (Ta), 170W (Tc) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 72 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6100 pF @ 30 V |
TPH2R306NH1,LQ
[ALLOC] verified